Results 11 to 20 of about 9,722 (211)

Magnetic Random Access Memory (MRAM) Device Development [PDF]

, 2000
The recent discovery of materials that have anomalous magneto-resistive properties has generated renewed commercial interest in metal-based fast memory storage as an alternative to the currently used semiconductor-based devices. One particularly promising ternary alloy, fabricated at LLNL, appeared to have exceptional field response.
Cerjan, C, Law, B P
openaire   +3 more sources

Deep-Learning-Based Adaptive Error-Correction Decoding for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

IEEE Transactions on Magnetics, 2023
Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising emerging non-volatile memory (NVM) technology with wide applications. However, the data recovery of STT-MRAM is affected by the diversity of channel raw bit error rate (BER) across different dies caused by process variations, as well as the unknown resistance offset due to ...
Xingwei Zhong, Kui Cai, Peng Kang, Guanghui Song, Bin Dai   +4 more
openaire   +3 more sources

Low power device design application by magnetic tunnel junctions in Magnetoresistive Random Access Memory (MRAM) [PDF]

SN Applied Sciences, 2019
The spintronics techniques combines the spin degree and charge which gives rise to state of the art devices like magnetic tunnel junctions which are ultra-low power devices. It is proposed in the paper to evaluate magnetic tunnel junctions (MTJ) at the device level.
S. Hamsa, N. Thangadurai, A. G. Ananth
openaire   +2 more sources

Sparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Access, 2023
Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
doaj   +2 more sources

Design of Rate-Compatible Protograph LDPC Codes for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) [PDF]

IEEE Access, 2019
Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile memories (NVMs) and storage class memories (SCMs).
Zhong Xingwei, Kui Cai, Pingping Chen, Zhen Mei   +3 more
openaire   +3 more sources

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory [PDF]

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +2 more sources

Recent progress in spin-orbit torque magnetic random-access memory

npj Spintronics
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
V. D. Nguyen, S. Rao, K. Wostyn, S. Couet   +3 more
doaj   +2 more sources

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices [PDF]

APL Materials, 2022
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability ...
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper   +7 more
doaj   +2 more sources

Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications [PDF]

Physical Review Applied, 2021
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM ...
Y. Wu, K. Garello, W. Kim, M. Gupta, M. Perumkunnil, V. Kateel, S. Couet, R. Carpenter, S. Rao, S. Van Beek, K.K. Vudya Sethu, F. Yasin, D. Crotti, G. Kar   +13 more
semanticscholar   +1 more source

A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital Converter

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob, Jiyue Yang, Haoran He, Puneet Gupta, Kang L Wang, Sudhakar Pamarti   +5 more
doaj   +1 more source