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On the temperature-dependent characteristics of perpendicular shape anisotropy-spin transfer torque-magnetic random access memories [PDF]
Journal of Applied Physics, 2021 The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSA-STT-MRAMs) take advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the nanomagnet. Such a concept is particularly well-suited for small junctions down to a few nanometers.
Wei Zhang +4 more
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017 The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions.
Ibrahim Ahmed +5 more
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MTJ-based random number generation and its application in SNN handwritten digits recognition
AIP Advances, 2023 Spiking Neural Networks (SNNs) that require synapse weight initialization using random numbers have been widely used in the neural morphological system. However, the random numbers generated by traditional digital circuits have certain repeatability, and
Xiaomi Chen +4 more
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Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Journal of Low Power Electronics and Applications, 2014 Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage ...
Luís Vitório Cargnini +4 more
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IEEE Transactions on Magnetics, 2022 As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed, and high scalability.
Xingwei Zhong, Kui Cai, Guanghui Song
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ECTI Transactions on Computer and Information Technology (ECTI-CIT), 2022 Spin-Transfer Torque Magnetic Random-Access Memory (STT-MRAM) is an emerging nonvolatile memory (NVM) technology that can replace conventional cache memory in computer systems. STT-RAM has many desirable properties such as high writing and reading speed, non-volatility, and low power consumption.
Chatuporn Duangthong +2 more
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Screening of 193i and EUV lithography process options for STT-MRAM orthogonal array MTJ pillars
Micro and Nano Engineering, 2021 Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as the most promising candidate to replace the complementary metal-oxide-semiconductor (CMOS) based memories that are dominating the market in the last few decades.
Murat Pak +3 more
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022 This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs). We use two write mechanisms to selectively write
Piyush Kumar, A. Naeemi
semanticscholar +1 more source
High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM
Micromachines, 2022 Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
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Non-volatile magnetic random access memories (MRAM)
Comptes Rendus. Physique, 2005 Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is described as well as the main subsisting design challenges.
Ricardo C. Sousa, I. Lucian Prejbeanu
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