Results 31 to 40 of about 9,722 (211)

Performance impact of a slower main memory: a case study of STT-MRAM in HPC [PDF]

, 2016
In high-performance computing (HPC), significant effort is invested in research and development of novel memory technologies. One of them is Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) --- byte-addressable, high-endurance non-volatile ...
Asifuzzaman, Kazi, Kwon, Ohseong, Pavlovic, Milan, Radojković, Petar, Radulović, Milan, Ryoo, Kyung-Chang, Zaragoza, David   +6 more
core   +1 more source

A Fokker–Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices [PDF]

IEEE Transactions on Electron Devices, 2021
Embedded nonvolatile memory technologies, such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM), are increasingly being researched for application in neuromorphic computing and hardware accelerators for artificial
Debasis Das, Xuanyao Fong
semanticscholar   +1 more source

Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation [PDF]

, 2019
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance.
Bagherzadeh, N, Boyraz, O, Braganca, P, Chen, JR, Krivorotov, IN, Lee, HK, Montoya, EA, Ngelale, R, Nilsson, M, Tseng, HW, Wan, L, Yang, E   +11 more
core   +2 more sources

Prospect for antiferromagnetic spintronics [PDF]

, 2015
Exploiting both spin and charge of the electron in electronic micordevices has lead to a tremendous progress in both basic condensed-matter research and microelectronic applications, resulting in the modern field of spintronics.
Fina, I., Jungwirth, T., Martí, X.
core   +3 more sources

Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

IEEE Journal of the Electron Devices Society, 2020
We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process.
Sk Ziaur Rahaman, I-Jung Wang, Ding-Yeong Wang, Chi-Feng Pai, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, Yao-Jen Chang, Yi-Ching Kuo, Yi-Hui Su, Guan-Long Chen, Fang-Ming Chen, Jeng-Hua Wei, Tuo-Hung Hou, Shyh-Shyuan Sheu, Chih-I Wu, Duan-Lee Deng   +16 more
doaj   +1 more source

Hi-End: Hierarchical, Endurance-Aware STT-MRAM-Based Register File for Energy-Efficient GPUs

IEEE Access, 2020
Modern Graphics Processing Units (GPUs) require large hardware resources for massive parallel thread executions. In particular, modern GPUs have a large register file composed of Static Random Access Memory (SRAM). Due to the high leakage current of SRAM,
Won Jeon, Jun Hyun Park, Yoonsoo Kim, Gunjae Koo, Won Woo Ro   +4 more
doaj   +1 more source

Valley-Spin Hall Effect-Based Nonvolatile Memory With Exchange-Coupling-Enabled Electrical Isolation of Read and Write Paths

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM include ...
Karam Cho, Sumeet Kumar Gupta
doaj   +1 more source

Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness

AIP Advances, 2020
In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM ...
Han-Sol Jun, Jin-Young Choi, Kei Ashiba, Sun-Hwa Jung, Miri Park, Jong-Ung Baek, Tae-Hun Shim, Jea-Gun Park   +7 more
doaj   +1 more source

Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

, 2019
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density.
Rzeszut, Piotr, Skowroński, Witold, Stobiecki, Tomasz, Wrona, Jerzy, Ziętek, Sławomir   +4 more
core   +1 more source

Ballistic bit addressing in a magnetic memory cell array

, 2005
A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select field pulses ...
Schumacher, H. W.
core   +1 more source