Results 41 to 50 of about 9,722 (211)
Magnetostatics of synthetic ferrimagnet elements [PDF]
We calculate the magnetostatic energy of synthetic ferrimagnet (SyF) elements, consisting of two thin ferromagnetic layers coupled antiferromagnetically through RKKY coupling.
Dieny, Bernard, Fruchart, Olivier
core +4 more sources
Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses.
Abraham, David W. +3 more
core +1 more source
Current-driven excitations in magnetic multilayers: a brief review
In 1996, Berger and Slonczewski independently predicted that a large enough spin-polarized dc current density sent perpendicularly through a ferromagnetic layer could produce magnetic excitations (spin-waves) or reversal of magnetization (switching).
Albert +33 more
core +1 more source
Inducing Ferromagnetism by Structural Engineering in a Strongly Spin‐Orbit Coupled Oxide
ABSTRACT Magnetic materials with strong spin‐orbit coupling (SOC) are essential for the advancement of spin‐orbitronic devices, as they enable efficient spin‐charge conversion, complex magnetic structures, spin‐valley physics, topological phases and other exotic phenomena.
Ji Soo Lim +19 more
wiley +1 more source
Adjustable spin torque in magnetic tunnel junctions with two fixed layers
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure.
Braganca, P. M. +6 more
core +1 more source
Asymmetry of the Ferroelectric Phase Transition in BaTiO3
Phase transitions are typically assumed to behave identically in forward and reverse. This work shows that in the ferroelectric material barium titanate this is not true: heating drives an abrupt, first‐order jump, while cooling gives a smooth, continuous change.
Asaf Hershkovitz +14 more
wiley +1 more source
Breaking the current density threshold in spin-orbit-torque magnetic random access memory
Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold.
Wang, X. R. +3 more
core +1 more source
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2
With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information.
Shaopu Han, Yanfeng Jiang
doaj +1 more source
Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching
Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power, and
Liang Chang +3 more
doaj +1 more source

