Results 51 to 60 of about 9,722 (211)

A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy. [PDF]

Nanoscale, 2018
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists of significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in ...
N. Perrissin, S. Lequeux, N. Strelkov, A. Chavent, Laurent, Vila, L. Buda-Prejbeanu, S. Auffret, Ricardo C. Sousa, Ioan, L. Prejbeanu, B. Dieny   +11 more
semanticscholar   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Research progresses on switching mechanism and advanced electrical characterizations of magnetic random access memory

Gongneng cailiao yu qijian xuebao
To address the energy efficiency and data throughput limitations of the Von Neumann architecture, computing-in-memory (CIM) systems based on spiking neural networks (SNNs) impose rigorous demands on the performance of non-volatile memory technologies ...
Xiaoqian MA, Shifan GAO, Yiming QU
doaj   +1 more source

A Novel Self-Reference Sensing Scheme for MLC MRAM [PDF]

, 2017
Magnetic random access memory (MRAM) is a promising nonvolatile memory technology targeted on on-chip or embedded applications. Storage density is one of the major design concerns of MRAM.
Li, Zheng
core  

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, EarlyView.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

TPCSA-MRAM: Ternary Precharge Sense Amplifier-Based MRAM

IEEE Access
The emerging multi-value logic technology in memory systems has increased data storage capacity and power efficiency. In this paper, to address the power consumption challenge of ternary memory, a ternary precharge sense amplifier (TPCSA)-based magnetic ...
Mohammad Mahdi Mazaheri, Abdolah Amirany, Mohammad Hossein Moaiyeri   +2 more
doaj   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Detrimental Effect of Interfacial Dzyaloshinskii-Moriya Interaction on Perpendicular Spin-Transfer-Torque Magnetic Random Access Memory

, 2015
Interfacial Dzyaloshinskii-Moriya interaction in ferromagnet/heavy metal bilayers is recently of considerable interest as it offers an efficient control of domain walls and the stabilization of magnetic skyrmions.
Jang, Peong-Hwa, Lee, Kyung-Jin, Lee, Seo-Won, Lee, Seung-Jae, Song, Kyoungmi   +4 more
core   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

Practical Experiments to Evaluate Quality Metrics of MRAM-Based Physical Unclonable Functions

IEEE Access, 2020
Process variations in the manufacturing of digital circuits can be leveraged to design Physical Unclonable Functions (PUFs) that are extensively employed in hardware-based security.
Arash Nejat, Frederic Ouattara, Mohammad Mohammadinodoushan, Bertrand Cambou, Ken Mackay, Lionel Torres   +5 more
doaj   +1 more source