Results 71 to 80 of about 9,722 (211)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

Memory materials and devices: From concept to application

open access: yesInfoMat, 2020
Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for ...
Zhenhan Zhang   +8 more
doaj   +1 more source

Scalable Emulation of Sign-Problem$-$Free Hamiltonians with Room Temperature p-bits

open access: yes, 2019
The growing field of quantum computing is based on the concept of a q-bit which is a delicate superposition of 0 and 1, requiring cryogenic temperatures for its physical realization along with challenging coherent coupling techniques for entangling them.
Camsari, Kerem Y.   +2 more
core   +1 more source

Feature Disentangling and Combination Implemented by Spin–Orbit Torque Magnetic Tunnel Junctions

open access: yesAdvanced Intelligent Systems, EarlyView.
Spin–orbit torque magnetic tunnel junctions (SOT‐MTJs) enable efficient feature disentangling and integration in image data. A proposed algorithm leverages SOT‐MTJs as true random number generators to disentangle and recombine features in real time, with experimental validation on emoji and facial datasets.
Xiaohan Li   +15 more
wiley   +1 more source

Spintronics and magnetic memory devices

open access: yesAdvances in Physics: X
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi   +6 more
doaj   +1 more source

The Progress of Orbitronics: The Enhancement of Orbital Torque Efficiency

open access: yesAdvanced Physics Research, EarlyView.
Orbit‐torque (OT) devices attract significant attention for their low‐power consumption and high stability in applications. This review systematically outlines strategies for enhancing OT efficiency. We categorize approaches into boosting orbital currents/torques and improving the orbital‐to‐spin conversion coefficient.
Pengfei Liu   +6 more
wiley   +1 more source

The magneto-optical Kerr effect for efficient characterization of thermal stability in dense arrays of p-MTJs

open access: yesAIP Advances, 2019
Magnetic Random Access Memory (MRAM) targeting cache memory replacement consists of high density arrays of perpendicular Magnetic Tunnel Junctions (p-MTJs).
S. Van Beek   +5 more
doaj   +1 more source

Yield, Area and Energy Optimization in Stt-MRAMs using failure aware ECC

open access: yes, 2016
Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths.
Fong, Xuanyao   +3 more
core   +1 more source

Field‐free programmable bipolar magnetic heterostructures for neuromorphic computing

open access: yesInfoMat, EarlyView.
Neuromorphic computing mimics the brain's efficiency, yet typical memristors lack biological synapses' dual signal control. We introduce a magnetic memristor enabling bidirectional, multi‐state modulation without external fields, validated in image feature extraction and neural clustering.
Yaping He   +9 more
wiley   +1 more source

Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ

open access: yes, 2017
Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switching energy.
Deng, Jiefang   +2 more
core   +1 more source

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