Results 81 to 90 of about 9,722 (211)

Origin of the Resistance-Area-Product Dependence of Spin-Transfer-Torque Switching in Perpendicular Magnetic Random-Access Memory Cells [PDF]

, 2019
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs).
G. Mihajlović, N. Smith, T. Santos, Jui-Lung Li, M. Tran, M. Carey, B. Terris, J. Katine   +7 more
semanticscholar   +1 more source

Lead‐free inorganic halide perovskite‐based synaptic memory for next generation neuromorphic computing

InfoMat, EarlyView.
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda, Deepak Kumar, Iman Biswas, Manisha Sharma, Youngmin Lee, Sejoon Lee, Sanjeev Kumar Sharma, Aniruddha Mondal   +7 more
wiley   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Toggle Spin-Orbit Torque MRAM With Perpendicular Magnetic Anisotropy

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy efficiency.
Naimul Hassan, Susana P. Lainez-Garcia, Felipe Garcia-Sanchez, Joseph S. Friedman   +3 more
doaj   +1 more source

Penumbuhan Lapisan Tipis Nicofe/si Sebagai Material Pembuatan Sensor Giant Magnetoresistance (Gmr) [PDF]

, 2009
Pada paper ini akan dilaporkan optimasi waktu penumbuhan lapisan tipis (thin film) NiCoFe/Si sebagai material sensor berbasis Giant Magnetoresistance (GMR) menggunakan Reaktor dc-Opposed Target Magnetron Sputttering (OTMS).
Djamal, M. (Mitra), Yulkifli, Y. (Yulkifli)   +1 more
core  

Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals

Advanced Functional Materials, Volume 36, Issue 18, 2 March 2026.
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus, Dávid Beke, Lili Vajtai, András Jánossy, László Forró, Ferenc Simon   +5 more
wiley   +1 more source

Evaluation of Magnetoresistive RAM for Space Applications [PDF]

Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating ...
Heidecker, Jason
core   +1 more source

Interlayer Dzyaloshinskii–Moriya Interaction in Synthetic Ferrimagnets for Spiking Neural Networks

Advanced Science, Volume 13, Issue 14, 9 March 2026.
This work introduces a groundbreaking integration of asymmetric magnetic structures (synthetic ferrimagnets) and antisymmetric magnetic interaction (interlayer Dzyaloshinskii–Moriya interaction) for the first time. It addresses the critical challenge of IL‐DMI detection and shows the discovery of unprecedented analog‐like spin‐orbit torque switching ...
Shen Li, Xing Chen, Mouad Fattouhi, Tianxun Huang, Chen Lv, Mark C. H. de Jong, Pingzhi Li, Daoqian Zhu, Xiaoyang Lin, Felipe Garcia‐Sanchez, Eduardo Martinez, Stéphane Mangin, Bert Koopmans, Weisheng Zhao, Reinoud Lavrijsen   +14 more
wiley   +1 more source

Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
A magnetic tunnel junction (MTJ) with two free layers shows four magnetization reversal phases governed by interlayer magnetic coupling (Jcpl). Phase 2 (sequential reversal) reduces write current (Iw) by 50% for 30‐nm‐diameter MTJs compared to Phase 4 (coherent reversal), while Jcpl also boosts thermal stability.
Shujun Ye, Koichi Nishioka
wiley   +1 more source

Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions

AIP Advances, 2020
The influence of magnetic damages at the sidewall of perpendicular magnetic tunnel junctions (p-MTJs), which are the core devices of spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), is discussed based on the thermal stability factor,
Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh   +3 more
doaj   +1 more source