A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics. [PDF]
Kang Y, Liu D, Li T, Qiu Z, Lu S, Hu X.
europepmc +1 more source
High-Performance p-Cu<sub>2</sub>O/n-β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Barrier Schottky Diodes with Copper Contact. [PDF]
Wang X +8 more
europepmc +1 more source
Calculation of the electronic parameters of an Al/DNA/p-Si Schottky barrier diode influenced by alpha radiation. [PDF]
Al-Ta'ii HM, Mohd Amin Y, Periasamy V.
europepmc +1 more source
Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]
Dudekula S +5 more
europepmc +1 more source
160 GHz Schottky Diodes from Solution-Processed IGZO. [PDF]
Panagiotidis L +17 more
europepmc +1 more source
Imperfection in Semiconductors Leading to High Performance Devices. [PDF]
Duboz JY +8 more
europepmc +1 more source
Optical and temperature dependent electrical properties of Er-/Yb-doped ZnO schottky diodes and thin films. [PDF]
Tolera D, Senbeta T, Mesfin B.
europepmc +1 more source
Beyond Point-like Defects in Bulk Semiconductors: Junction Spectroscopy Techniques for Perovskite Solar Cells and 2D Materials. [PDF]
Capan I.
europepmc +1 more source
Plasmon-Induced Graphene/Silicon Schottky Junctions for Ultrasensitive Gas Sensing. [PDF]
Drozdowska K +4 more
europepmc +1 more source
The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]
Shi Y +5 more
europepmc +1 more source

